Controllable gap height for an image sensor package

ABSTRACT

According to an aspect, an image sensor package includes a transparent member, a substrate, and an interposer disposed between and coupled to the transparent member and the substrate, where the interposer defines a first cavity area and a second cavity area. The image sensor package includes an image sensor die disposed within the first cavity area of the interposer, where the image sensor die has a sensor array configured to receive light through the transparent member and the second cavity area. The image sensor package includes a bonding material that couples the image sensor die to the interposer within the first cavity area.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 62/828,764, filed on Apr. 3, 2019, the entire contentsof which is incorporated herein by reference.

TECHNICAL FIELD

This description relates to an image sensor package having acontrollable gap height.

BACKGROUND

Image sensor packages are commonly used in camera modules in a widevariety of applications. An image sensor package may include a coverglass that is coupled to a sensor device in a manner that a gap existsbetween an active area of the sensor device and an interior surface ofthe cover glass. In some examples, a bonding material is used to couplethe sensor device to the cover glass, and a size of the bonding materialmay define the gap height.

SUMMARY

According to an aspect, an image sensor package includes a transparentmember, a substrate, and an interposer disposed between and coupled tothe transparent member and the substrate, where the interposer defines afirst cavity area and a second cavity area. The image sensor packageincludes an image sensor die disposed within the first cavity area ofthe interposer, where the image sensor die has a sensor array configuredto receive light through the transparent member and the second cavityarea. The image sensor package includes a bonding material that couplesthe image sensor die to the interposer within the first cavity area.

According to some aspects, the image sensor package includes one or moreof the following features (or any combination thereof). The secondcavity area may define at least a portion of an empty space between thetransparent member and the sensor array. The substrate may be aredistribution layer. The transparent member may be coupled to theinterposer using a secondary bonding material. The image sensor die mayinclude a complementary metal-oxide semiconductor (CMOS) image sensor.The image sensor die may be electrically connected to the substrate. Theimage sensor die may define one or more conductive vias. The imagesensor package may include a conductive trace coupled to the interposerwithin the first cavity area, where the conductive trace extends to thesubstrate, and a conductive component coupled to the conductive traceand the image sensor die. The image sensor package may include aplurality of conductive components coupled to the substrate. The imagesensor package may include a device coupled to the substrate, asecondary substrate, and a molding that extends between the substrateand the secondary substrate. The device may be coupled to the substratein a flip-chip configuration.

According to an aspect, an image sensor package includes a transparentmember, a substrate, and an interposer disposed between and coupled tothe transparent member and the substrate, where the interposer defines acavity area. The image sensor package includes an image sensor diedisposed within the cavity area of the interposer, where a distancebetween a sensor array of the image sensor die and the transparentmember defines a gap height, where the gap height is based on a size ofthe interposer, and a bonding material that couples the image sensor dieto the interposer within the cavity area. The image sensor die mayinclude an interconnection layer, a sensor substrate layer, and aredistribution layer, where the sensor substrate layer defines one ormore conductive vias. The image sensor package includes a conductivetrace coupled to the interposer within the first cavity area, where theconductive trace extends to the substrate, and a conductive componentcoupled to the conductive trace and the image sensor die. The substrateincludes a first surface and a second surface, where the first surfaceof the substrate is coupled to the image sensor die, and the imagesensor package may include a device coupled to the second surface of thesubstrate. The substrate is a first substrate, and the image sensorpackage includes a second substrate, and a molding disposed between thefirst substrate and the second substrate, where the molding encapsulatesthe device. The image sensor package may include one or more conductivevias extending through the molding. The interposer may be coupled to thetransparent member with a secondary bonding material.

According to an aspect, a method for assembling an image sensor packageincludes forming an interposer with a cavity area, coupling atransparent member to the interposer using a first bonding material,disposing an image sensor die within the cavity area, and applying asecond bonding material to a gap between an edge of the image sensor dieand a portion of the interposer defined by the cavity area, where aheight of the interposer at least partially defines a distance betweenthe transparent member and a sensory array of the image sensor. In someexamples, the method includes applying a metal trace portion the portionof the interposer defined by the cavity area.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other features will beapparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1B illustrate an image sensor package according to an aspect.

FIGS. 2 through 7 illustrate image sensor packages according to otheraspects.

FIGS. 8 through 14 illustrate example operations for fabricating imagesensor packages according to various aspects.

FIG. 15A illustrate example operations for fabricating an image sensorpackage according to an aspect.

FIG. 15B illustrate continuing example operations for the image sensorpackage of FIG. 15A according to an aspect.

DETAILED DESCRIPTION

The present disclosure relates to an image sensor package having aninterposer that provides a relatively rigid structure for an imagesensor die. For example, the interposer defines a cavity area (e.g., acut-out portion of the interposer) that receives the image sensor die.The image sensor die is coupled to the interposer within the cavity areaof the interposer, and a transparent member (e.g., a glass cover) iscoupled to the interposer via a bonding material. The size (e.g.,thickness) of the interposer (as well as the size of the cavity area)may control a gap height between an active area of the image sensor dieand the transparent member.

In some examples, the image sensor package discussed herein may increase(or control) the gap height (without using additional bonding materialto support a higher gap height), thereby permitting relatively largerimage sensor devices to be used in compact image sensor packages. Forinstance, without the use of the interposer, an image sensor package mayhave to use a relatively large amount of bonding material to couple thetransparent member to the image sensor die, where the bonding materialacts as a dam member that spaces the transparent member away from theactive area of the sensor, in order to increase the size of the gapheight. The increased amount of the bonding material (in order toincrease the gap height) may cause delamination or be susceptible tocracks.

However, the image sensor package discussed herein may control the gapheight with the interposer in a manner that does not require additionalbonding material, thereby decreasing the risk of delamination or cracks.In addition, in some examples, the interposer may reduce (or block)lateral incident light into the sensor array of the image sensorpackage, which can improve the quality of the captured image.Furthermore, relatively large image sensor devices may have limitedspace to use bond wires (e.g., a small amount of space may exist from asensor edge to a sensor array edge).

FIG. 1A illustrates an image sensor package 100 according to an aspect,and FIG. 1B illustrates an interposer 110 used within the image sensorpackage 100 according to an aspect. In some examples, the image sensorpackage 100 includes a complementary metal-oxide-semiconductor (CMOS)image sensor (CIS) package.

The image sensor package 100 includes a substrate 102, an image sensordie 104, the interposer 110, and a transparent member 106. Thetransparent member 106 is coupled to the interposer 110 via a bondingmaterial 105. In some examples, the image sensor die 104 includes a CMOSimage sensor die.

The interposer 110 is disposed between and coupled to the transparentmember 106 and the substrate 102. The interposer 110 defines a firstcavity area 101 that defines the space to hold the image sensor die 104.In some examples, the first cavity area 101 is a cutout (or removed)portion of the interposer 110. In some examples, the interposer 110defines a first portion 111 and a second portion 113, where the secondportion 113 is a separate body from the first portion 111. Each of thefirst portion 111 and the second portion 113 includes a first inner edge123 and a second inner edge 125. The first inner edge 123 and the secondinner edge 125 of the first portion 111 and the second portion 113 maydefine the first cavity area 101. In some examples, the second inneredge 125 is disposed at an angle (e.g., perpendicular) to the firstinner edge 123. In some examples, a length of the first inner edge 123in a direction A1 is greater than a height of the image sensor die 104in the direction A1. In some examples, a distance along a direction A2between the first inner edge 123 of the first portion 111 and the firstinner edge 123 of the second portion 113 is greater than a width of theimage sensor die 104 in the direction A2.

The image sensor die 104 is disposed within the first cavity area 101and coupled to the interposer 110 using a bonding material 118. Thebonding material 118 includes portions disposed in a gap defined by thespace between a sensor edge 121 of the image sensor die 104 and thefirst inner edge 123 of the interposer 110. In some examples, thebonding material 118 includes portions disposed in a gap defined by thespace between a first surface 115 of the image sensor die 104 and thesecond inner edge 125. In some examples, the bonding material 118includes an adhesive material. In some examples, the bonding material118 includes glue bonding material, fusion bonding material, and/oranodic bonding material. In some examples, the bonding material 118includes epoxy resin.

The interposer 110 includes a second cavity area 103 that defines (atleast in part) an empty space between the image sensor die 104 and thetransparent member 106. The second cavity area 103 may be a cutout (orremoved) portion from the interposer 110. In some examples, the secondcavity area 103 is devoid of any package element (e.g., is empty space).Each of the first portion 111 and the second portion 113 may define aninner edge 131. The second cavity area 103 may be defined by the spacebetween the inner edge 131 of the first portion 111 and the inner edge131 of the second portion 113. In some examples, the distance betweenthe inner edge 131 of the first portion 111 and the inner edge 131 ofthe second portion 113 in the direction A2 is less than the width of theimage sensor die 104 in the direction A2. The image sensor die 104 isassociated with or includes a sensor array (disposed on the firstsurface 115 of the image sensor die 104) that is configured to receivelight through the transparent member 106 and the second cavity area 103.The sensor array may include an array of pixel elements configured toconvert electromagnetic radiation (e.g., light) to electrical signals.

In some examples, the interposer 110 includes a substrate (e.g., aninsulating substrate). In some examples, the interposer 110 is a siliconinterposer. In some examples, the interposer 110 includes a basematerial, where the base material is a dielectric material or aninsulating material). In some examples, the interposer 110 includes oneor more electrical traces coupled to one or more surfaces (or embeddedwithin) the base material of the interposer 110.

The interposer 110 (and the bonding material 105) may position thetransparent member 106 away from the image sensor die 104 in thedirection A1. The transparent member 106 includes a first surface 134and a second surface 136 disposed opposite to the first surface 134. Thedistance between the second surface 136 of the transparent member 106and the image sensor die 104 defines a gap height 107, and the gapheight 107 is based on the thickness of the interposer 110 (and thethickness of the bonding material 105) in the direction A1. In someexamples, the gap height 107 may be increased through the use of theinterposer 110 (thereby can support relatively larger sensor devices)such that the amount of the bonding material 105 is relatively small(thereby avoiding delamination or cracks that otherwise may occur if alarger amount of bonding material 105 is used).

The substrate 102 includes a first surface 130 and a second surface 132disposed opposite to the first surface 130. In some examples, thesubstrate 102 is a redistribution layer. The redistribution layer mayinclude one or more electrical traces and/or one or more passivationlayers. In some examples, the electrical traces may be configured toand/or used to transmit signals to and/or from devices (e.g., electronicdevices included in a semiconductor region (e.g., epitaxial layer and/orsemiconductor substrate)) connected to the electrical traces. In someexamples, the electrical traces can include conductive traces (e.g.,metallic traces) such as copper traces, aluminum traces, and/or soforth. In some examples, the substrate 102 includes a printed circuitboard (PCB) substrate. In some examples, the substrate 102 includes adielectric material.

The first surface 130 of the substrate 102 is disposed in a plane A4. Insome examples, the second surface 132 is disposed in parallel with thefirst surface 130. The direction A1 is aligned perpendicular to theplane A4, and a direction A2 is perpendicular to the direction A1. Adirection A3 into the page (shown as a dot) is aligned parallel to theplane A4 and is orthogonal to directions A1 and A2. The directions A1,A2, and A3, and plane A4, are used throughout several of the variousviews of the implementations described throughout the figures forsimplicity.

The image sensor die 104 is coupled to the substrate 102. For example, asecond surface 117 of the image sensor die 104 may be coupled to thefirst surface 130 of the substrate 102. In some examples, the imagesensor die 104 may be coupled to the first surface 130 of the substrate102 using one or more bonding materials (e.g., an adhesive layer, dieattach film, polymer-based material, an epoxy resin, etc.) in order tophysically couple the image sensor die 104 to the substrate 102. In someexamples, the image sensor die 104 is coupled to the substrate 102 is aflip-chip configuration using one or more conductive bump member and anunderfill material. In some examples substrate 102 is a distributionlayer and the image sensor die 104 is coupled to the substrate 102 byone or more deposition and lithography methods.

The transparent member 106 is coupled to the interposer 110 using thebonding material 105. In some examples, the bonding material 105includes an adhesive material. In some examples, the bonding material105 includes glue bonding material, fusion bonding material, and/oranodic bonding material. In some examples, the bonding material 105includes epoxy resin. In some examples, the bonding material 105includes polymer-based material. In some examples, the bonding material105 includes one or more materials that are different than thematerial(s) used for the bonding material 118. In some examples, thematerial(s) of the bonding material 105 may be the same as thematerial(s) used for the bonding material 118.

The transparent member 106 includes an optically transparent materialthat allows electromagnetic radiation (e.g., light (e.g., visiblelight)) to pass through (e.g., pass through the entirety of thematerial). In some examples, the transparent member 106 includes anoptically transparent material that allows the transmission of lightwaves without being scattered (or being scattered to a relatively smallor negligible degree). In some examples, the transparent member 106includes a cover. In some examples, the transparent member 106 includesa lid. In some examples, the transparent member 106 includes one or moreorganic materials and/or one or more inorganic materials. In someexamples, the transparent member 106 includes a glass material. In someexamples, the glass material is coated on one or both surfaces. In someexamples, the transparent member 106 includes one or more layers oftransparent material.

FIG. 2 illustrates an image sensor package 200 according to an aspect.The image sensor package 200 may include any of the features describedwith reference to the image sensor package 100 of FIGS. 1A and 1B. Insome examples, the image sensor package 200 includes a complementarymetal-oxide-semiconductor (CMOS) image sensor (CIS) package. The imagesensor package 200 includes a substrate 202, an image sensor die 204coupled to the substrate 202, an interposer 210, and a transparentmember 206 coupled to the interposer 210 via a bonding material 205. Theinterposer 210 defines a first cavity area 201 that holds the imagesensor die 204, and a second cavity area 203 that defines (at least inpart) an empty space between the image sensor die 204 and thetransparent member 206. The image sensor die 204 is disposed within thefirst cavity area 201, and coupled to the interposer 210 using a bondingmaterial 218.

The substrate 202 includes a first surface 230 and a second surface 232disposed opposite to the first surface 230. In some examples, thesubstrate 202 is a redistribution layer. The redistribution layer mayinclude one or more electrical traces and/or one or more passivationlayers. In some examples, the electrical traces may be configured toand/or used to transmit signals to and/or from devices (e.g., electronicdevices included in a semiconductor region (e.g., epitaxial layer and/orsemiconductor substrate)) connected to the electrical traces. In someexamples, the electrical traces can include conductive traces (e.g.,metallic traces) such as copper traces, aluminum traces, and/or soforth. In some examples, the substrate 202 includes a printed circuitboard (PCB) substrate. In some examples, the substrate 202 includes adielectric material. As shown in FIG. 2, the substrate 202 may includeconductive contacts 224 that are exposed on the second surface 232 ofthe substrate 202. The conductive contacts 224 may include metallicelements such as conductive pads or terminals that are used to transferelectrical signals.

The image sensor package 200 includes conductive components 220 coupledto the conductive contacts 224 on the second surface 232 of thesubstrate 202. In some examples, the conductive components 220 aresurface-mount packaging elements. In some examples, the conductivecomponents 220 include solder balls. The conductive components 220 arecomponents used to connect to an external device (e.g., a ball gridarray (BGA) device). However, the conductive components 220 may includeother types of surface-mount packaging elements.

The first surface 230 of the substrate 202 is disposed in a plane A4. Insome examples, the second surface 232 is disposed in parallel with thefirst surface 230. A direction A1 is aligned perpendicular to the planeA4, and a direction A2 is perpendicular to the direction A1. A directionA3 into the page (shown as a dot) is aligned parallel to the plane A4and is orthogonal to directions A1 and A2. The directions A1, A2, andA3, and plane A4, are used throughout several of the various views ofthe implementations described throughout the figures for simplicity.

The image sensor die 204 may include a CMOS image sensor die. In someexamples, the image sensor die 204 includes an interconnection layer212, a sensor substrate layer 213, and a redistribution layer 214. Insome examples, the image sensor die 204 includes one or more vias 216.In some examples, the vias 216 are holes that are plated or filled withone or more conductive (e.g., metal) materials. In some examples, thevias 216 extend through the sensor substrate layer 213 and electricallyconnect the interconnection layer 212 to the redistribution layer 214.The image sensor die 204 includes a sensor array 208. The sensor array208 may include an array of pixel elements configured to convertelectromagnetic radiation (e.g., light) to electrical signals. In someexamples, the sensor array 208 is coupled to the interconnection layer212. The area on the surface that includes the sensor array 208 maydefine the active area of the image sensor die 204.

The image sensor die 204 is disposed within the first cavity area 201 ofthe interposer 210, and the image sensor die 204 is coupled to theinterposer 210 using the bonding material 218. The interposer 210 isalso coupled to the first surface 230 of the substrate 202. In someexamples, the interposer 210 includes a base material. In some examples,the base material includes a dielectric material. In some examples, thebase material includes an insulating material. In some examples, theinterposer 210 includes one or more electrical traces coupled to one ormore surfaces (or embedded within) the base material of the interposer210.

The image sensor die 204 is coupled to the substrate 202. For example,the redistribution layer 214 of the image sensor die 204 may be coupledto first surface 230 of the substrate 202 using one or more bondingmaterials (e.g., an adhesive layer, die attach film, polymer-basedmaterial, an epoxy resin, etc.) in order to physically couple the imagesensor die 204 to the substrate 202. In some examples, the substrate 202is a redistribution layer and the image sensor die 204 is coupled to thesubstrate 202 by one or more deposition and lithography methods.

The transparent member 206 is coupled to the interposer 210 using thebonding material 205. In some examples, the bonding material 205includes an adhesive material. In some examples, the bonding material205 includes a glue bonding material, a fusion bonding material, and/oran anodic bonding material. In some examples, the bonding material 205includes an epoxy resin. In some examples, the bonding material 205includes a polymer-based material. In some examples, the bondingmaterial 205 includes one or more materials that are different than thematerial(s) used for the bonding material 218. In some examples, thematerial(s) of the bonding material 205 may be the same as thematerial(s) used for the bonding material 218.

The interposer 210 and the bonding material 205 may position thetransparent member 206 away from the sensor array 208 in the directionA1. The transparent member 206 includes a first surface 234 and a secondsurface 236 disposed opposite to the first surface 234. The distancebetween the second surface 236 of the transparent member 206 and thesensor array 208 defines a gap height 207, and the gap height 207 iscontrolled by the thickness of the interposer 210 and the thickness ofthe bonding material 205 in the direction A1. In some examples, thethickness of the interposer 210 is at least twice the thickness of thebonding material 205. In some examples, the gap height 207 may beincreased through the use of the interposer 210 (thereby can supportrelatively larger sensor devices) such that the amount of the bondingmaterial 205 is relatively small (thereby avoiding delamination orcracks that otherwise may occur if a larger amount of bonding material205 is used).

The transparent member 206 includes an optically transparent materialthat allows electromagnetic radiation (e.g., light (e.g., visiblelight)) to pass through (e.g., pass through the entirety of thematerial). In some examples, the transparent member 206 includes anoptically transparent material that allows the transmission of lightwaves without being scattered (or being scattered to a relatively smallor negligible degree). In some examples, the transparent member 206includes a cover. In some examples, the transparent member 206 includesa lid. In some examples, the transparent member 206 includes one or moreorganic materials and/or one or more inorganic materials. In someexamples, the transparent member 206 includes a glass material. In someexamples, the glass material is coated on one or both surfaces. In someexamples, the transparent member 206 includes one or more layers oftransparent material.

FIG. 3 illustrates an image sensor package 300 according to an aspect.The image sensor package 300 includes multiple semiconductor devices. Insome examples, the image sensor package 300 includes a CMOS image sensorpackage with multiple semiconductor devices. The image sensor package300 may include an image sensor die 304 and a device 340 arranged in astacked configuration. In some examples, the image sensor package 300includes two or more devices (e.g., different than the image sensor die304). In some examples, the device 340 includes a semiconductor device.In some examples, the device 340 includes an integrated circuit (IC)driver die. In some examples, the device 340 includes a passive device.

In some examples, the image sensor package 300 is considered a two-levelpackage, where the first level is the same (similar) to the image sensorpackage 200 of FIG. 2, and the second level is stacked on the firstlevel and includes the device 340. The image sensor package 300 mayinclude any of the features described with reference to the previousfigures.

Similar to the image sensor package 200 of FIG. 2, the image sensorpackage 300 includes a substrate 302, an image sensor die 304 that iscoupled to the substrate 302, an interposer 310, and a transparentmember 306. The substrate 302 has a surface disposed with a plane A4.The interposer 310 may include one or more conductive contacts 324. Theinterposer 310 defines a first cavity area 301 and a second cavity area303. The image sensor die 304 is disposed within the first cavity area301, and the image sensor die 304 is coupled to the interposer 310 usinga bonding material 318. The second cavity area 303 defines (at least inpart) the empty space between a sensor array 308 of the image sensor die304 and the transparent member 306.

The transparent member 306 is coupled to the interposer 310 using abonding material 305. The interposer 310 and the bonding material 305may position the transparent member 306 away from the sensor array 308in the direction A1. The distance between the transparent member 306 andthe sensor array 308 defines a gap height 307, and the gap height 307 iscontrolled by the thickness of the interposer 310 and the thickness ofthe bonding material 305 in the direction A1. For example, the gapheight 307 may be increased through the use of the interposer 310(thereby can support relatively larger sensor devices) such that theamount of the bonding material 305 is relatively small (thereby avoidingdelamination or cracks that otherwise may occur if a larger amount ofbonding material 305 is used).

The image sensor die 304 includes an interconnection layer 312, a sensorsubstrate layer 313, and a redistribution layer 314, and the imagesensor die 304 includes one or more vias 316 that extend through thesensor substrate layer 313.

As shown in FIG. 3, the device 340 is coupled to the substrate 302. Insome examples, the device 340 is coupled to the substrate 302 in a flipchip configuration. For example, the device 340 is coupled to thesubstrate 302 using one or more bump members 342 (e.g., copper pillarswith solder, gold plated bumps, solder bumps, and/or gold stud bumps,etc.), and an under-fill material 344 is disposed in the gap between thedevice 340 and the substrate 302, where the under-fill material 344encapsulates the bump members 342. In some examples, the substrate 302is a redistribution layer and the image sensor die 304 is coupled to thesubstrate 302 by one or more deposition and lithography methods.

As shown in FIG. 3, the image sensor package 300 includes a substrate350, and a molding 341 that extends between the substrate 350 and thesubstrate 302. The molding 341 may include an encapsulation materialsuch as an epoxy molding. The molding 341 may include one or more typesof material (e.g., in a molding compound if including multiple types ofmaterials) such as a metal, a plastic, a resin, an epoxy, a phenolichardener, a silica material, a pigment, a glass, a ceramic casing,and/or so forth. The molding 341 may encapsulate the device 340. In someexamples, the substrate 350 includes a redistribution layer. Theredistribution layer may include one or more electrical traces and oneor more passivation layers. In some examples, the substrate 350 includesa PCB substrate having a dielectric material. The substrate 350 mayinclude conductive contacts 324.

The image sensor package 300 includes one or more vias 346 that extendthrough the molding 341. For example, each via 346 may extend from aparticular conductive contact 324 on the substrate 302 to acorresponding conductive contact 348 on the substrate 350. The imagesensor package 300 includes conductive components 320 coupled to theconductive contacts 324 of the substrate 350. In some examples, theconductive components 320 are surface-mount packaging elements. In someexamples, the conductive components 320 include solder balls. Theconductive components 320 are components used to connect to an externaldevice (e.g., a ball grid array (BGA) device). However, the conductivecomponents 320 may include other types of surface-mount packagingelements.

FIG. 4 illustrates an image sensor package 400 according to an aspect.The image sensor package 400 includes multiple semiconductor devices. Insome examples, the image sensor package 400 includes a CMOS image sensorpackage with multiple semiconductor devices arranged in a two-levelconfiguration. The image sensor package 400 may include an image sensordie 404 and a device 440 arranged in a stacked configuration. The imagesensor package 400 may be similar to the image sensor package 300 ofFIG. 3 except that the device 440 is coupled to a substrate 402 using abonding material 444 in a non-flip-chip configuration. In some examples,the device 440 includes a passive device. In some examples, the device440 includes a semiconductor device. In some examples, the device 440includes a driver IC semiconductor device. The image sensor package 400may include any of the features described with reference to the previousfigures.

The image sensor package 400 includes a substrate 402, an image sensordie 404 that is coupled to the substrate 402, an interposer 410, and atransparent member 406. The substrate 402 has a surface disposed withinthe plane A4. The interposer 410 defines a first cavity area 401 and asecond cavity area 403. The image sensor die 404 is disposed within thefirst cavity area 401, and the image sensor die 404 is coupled to theinterposer 410 using a bonding material 418. The second cavity area 403defines at least a portion of the empty space between a sensor array 408of the image sensor die 404 and the transparent member 406. Thetransparent member 406 is coupled to the interposer 410 using a bondingmaterial 405. The interposer 410 and the bonding material 405 mayposition the transparent member 406 away from the sensor array 408 inthe direction A1. The distance between the transparent member 406 andthe sensor array 408 defines a gap height 407, and the gap height 407 iscontrolled by the thickness of the interposer 410 and the thickness ofthe bonding material 405 in the direction A1.

The image sensor die 404 includes an interconnection layer 412, a sensorsubstrate layer 413, and a redistribution layer 414, and the imagesensor die 404 includes one or more vias 416 that extend through thesensor substrate layer 413.

As shown in FIG. 4 the device 440 is coupled to the substrate 402 usingthe bonding material 444. As shown in FIG. 4, the image sensor package400 includes a substrate 450, and a molding 441 that extends between thesubstrate 450 and the substrate 402. The molding 441 may encapsulate thedevice 440. In some examples, the substrate 450 includes aredistribution layer. The redistribution layer may include one or moreelectrical traces and one or more passivation layers. In some examples,the substrate 450 includes a PCB substrate having a dielectric material.The substrate 450 may include conductive contacts 448.

Referring to FIG. 4, the image sensor package 400 includes vias 449,where each via 449 extends from a conductive contact 425 on the device440 to the substrate 450. In some examples, the image sensor package 400includes one or more vias 446 that extend through the molding 441. Forexample, the vias 446 may extend from the substrate 402 to the substrate450. The image sensor package 400 includes conductive components 420coupled to the conductive contacts 448 of the substrate 450. In someexamples, the conductive components 420 are surface-mount packagingelements. In some examples, the conductive components 420 include solderballs. The conductive components 420 are components used to connect toan external device (e.g., a ball grid array (BGA) device). However, theconductive components 420 may include other types of surface-mountpackaging elements.

FIG. 5 illustrates an image sensor package 500 according to an aspect.In some examples, the image sensor package 500 includes a CIS package.The image sensor package 500 is similar to the image sensor package 200of FIG. 2 except that an image sensor die 504 is electrically connectedto a substrate 502 via conductive bumps 553 and metal trace portions555, as further described below.

As shown in FIG. 5, the image sensor die 504 is coupled to the substrate502. The substrate 502 has a surface disposed within the plane A4. Theimage sensor die 504 may include an image sensor semiconductor die. Insome examples, the image sensor die 504 includes a CMOS image sensordie. In some examples, the image sensor die 504 includes aninterconnection layer 512 and a sensor substrate layer 513. In someexamples, the image sensor die 504 does not include a redistributionlayer on the backside of the image sensor die 504. In some examples, theimage sensor die 504 does not include a via through the sensor substratelayer 513. The image sensor die 504 includes a sensor array 508. Thesensor array 508 may include an array of pixel elements configured toconvert electromagnetic radiation (e.g., light) to electrical signals.In some examples, the sensor array 508 is coupled to the interconnectionlayer 512.

In some examples, the substrate 502 is a redistribution layer (e.g., apackage redistribution layer). The redistribution layer may include oneor more electrical traces and/or one or more passivation layers. In someexamples, the electrical traces can include conductive traces (e.g.,metallic traces) such as copper traces, aluminum traces, and/or soforth. In some examples, the substrate 502 includes a printed circuitboard (PCB) substrate having a dielectric material. As shown in FIG. 5,the substrate 502 may include conductive contacts 524, and theconductive contacts 524 may include metallic elements such as conductivepads or terminals that are used to transfer electrical signals.

The image sensor package 500 may include conductive components 520coupled to the conductive contacts 524. In some examples, the conductivecomponents 520 are surface-mount packaging elements. In some examples,the conductive components 520 include solder balls. The conductivecomponents 520 are components used to connect to an external device(e.g., a ball grid array (BGA) device). However, the conductivecomponents 520 may include other types of surface-mount packagingelements.

The interposer 510 defines a first cavity area 501 that holds the imagesensor die 504, and a second cavity area 503 that defines (at least inpart) an empty space between the image sensor die 504 and thetransparent member 506. The image sensor die 504 is disposed within thefirst cavity area 501, and coupled to the interposer 510 using a bondingmaterial 518. The bonding material 518 is configured to hold the imagesensor die 504 within the first cavity area 501. The interposer 510 isalso coupled to the substrate 502. In some examples, the interposer 510includes a base material. In some examples, the base material includes adielectric material. In some examples, the base material includes aninsulating material. In some examples, the interposer 510 includes oneor more electrical traces coupled to one or more surfaces (or embeddedwithin) the base material of the interposer 510.

The metal trace portions 555 are disposed on the interposer 510 withinthe first cavity area 501 and may extend to the substrate 502. Aconductive bump 553 is disposed within the first cavity area 501 betweena metal trace portion 555 and the interconnection layer 512 of the imagesensor die 504. For example, the conductive bump 553 is coupled to themetal trace portion 555 and the interconnection layer 512.

A transparent member 506 is coupled to the interposer 510 using thebonding material 505. In some examples, the bonding material 505includes an adhesive material. In some examples, the bonding material505 includes glue bonding material, fusion bonding material, and/oranodic bonding material. In some examples, the bonding material 505includes an epoxy resin. In some examples, the bonding material 505includes a polymer-based material. The interposer 510 and the bondingmaterial 505 may position the transparent member 506 away from thesensor array 508 in the direction A1. The distance between thetransparent member 506 and the sensor array 508 defines a gap height507, and the gap height 507 is controlled by the thickness of theinterposer 510 and the thickness of the bonding material 505 in thedirection A1. In some examples, the thickness of the interposer 510 isat least twice the thickness of the bonding material 505.

FIG. 6 illustrates an image sensor package 600 according to an aspect.The image sensor package 600 includes multiple semiconductor devices. Insome examples, the image sensor package 600 includes a CMOS image sensorpackage with multiple semiconductor devices arranged in a two-levelconfiguration. The image sensor package 600 may include an image sensordie 604 and a device 640 arranged in a stacked configuration. The imagesensor package 600 may include a first level similar to FIG. 5 and asecond level similar to FIG. 3. The image sensor package 600 may includeany of the features described with reference to the previous figures.

The image sensor die 604 is coupled to the substrate 602. The imagesensor die 604 may include an image sensor semiconductor die (e.g., aCMOS image sensor die). In some examples, the image sensor die 604includes an interconnection layer 612 and a sensor substrate layer 613.In some examples, similar to the image sensor package 500 of FIG. 5, theimage sensor die 604 does not include a redistribution layer on thebackside of the image sensor die 604, and does not include a via throughthe sensor substrate layer 613. The image sensor die 604 includes asensor array 608 having an array of pixel elements configured to convertelectromagnetic radiation (e.g., light) to electrical signals.

In some examples, the substrate 602 is a redistribution layer (e.g., apackage redistribution layer). The redistribution layer may include oneor more electrical traces and/or one or more passivation layers. Asshown in FIG. 6, the substrate 602 may include conductive contacts 624,and the conductive contacts 624 may include metallic elements such asconductive pads or terminals that are used to transfer electricalsignals.

The interposer 610 defines a first cavity area 601 that holds the imagesensor die 604, and a second cavity area 603 that defines (at least inpart) an empty space between the image sensor die 604 and thetransparent member 606. The image sensor die 604 is disposed within thefirst cavity area 601, and coupled to the interposer 610 using a bondingmaterial 618. The bonding material 618 is configured to hold the imagesensor die 604 within the first cavity area 601. The interposer 610 isalso coupled to the substrate 602. In some examples, the interposer 610includes a base material (e.g., a dielectric/insulating material) thatmay or may not have electrical traces.

Metal trace portions 655 are disposed on the interposer 610 within thefirst cavity area 601 and may extend to the substrate 602. A conductivebump 653 is disposed within the first cavity area 601 between a metaltrace portion 655 and the interconnection layer 612 of the image sensordie 604. For example, the conductive bump 653 is coupled to the metaltrace portion 655 and the interconnection layer 612.

A transparent member 606 is coupled to the interposer 610 using thebonding material 605. In some examples, the bonding material 605includes an adhesive material, a glue bonding material, a fusion bondingmaterial, an anodic bonding material, an epoxy resin, and/or apolymer-based material. The interposer 610 and the bonding material 605may position the transparent member 606 away from the sensor array 608in the direction A1. The distance between the transparent member 606 andthe sensor array 608 defines a gap height 607, and the gap height 607 iscontrolled by the thickness of the interposer 610 and the thickness ofthe bonding material 605 in the direction A1. In some examples, thethickness of the interposer 610 is at least twice the thickness of thebonding material 605.

As shown in FIG. 6, the device 640 is coupled to the substrate 602. Insome examples, the device 640 is coupled to the substrate 602 in a flipchip configuration. For example, the device 640 is coupled to thesubstrate 602 using one or more bump members 642 (e.g., copper pillarswith solder, gold plated bumps, solder bumps, and/or gold stud bumps,etc.), and an under-fill material 644 is disposed in the gap between thedevice 640 and the substrate 602, where the under-fill material 644encapsulates the bump members 642.

As shown in FIG. 6, the image sensor package 600 includes a substrate650, and a molding 641 that extends between the substrate 650 and thesubstrate 602. The molding 641 may include an encapsulation materialsuch as an epoxy molding. The molding 641 may encapsulate the device640. In some examples, the substrate 650 is a redistribution layer. Theredistribution layer may include one or more electrical traces and oneor more passivation layers. The substrate 650 may include conductivecontacts 648.

The image sensor package 600 includes one or more vias 646 that extendthrough the molding 641. For example, each via 646 may extend from aparticular conductive contact 624 on the substrate 602 to the substrate650. The image sensor package 600 includes conductive components 620coupled to the conductive contacts 648 of the substrate 650. In someexamples, the conductive components 620 are surface-mount packagingelements.

FIG. 7 illustrates an image sensor package 700 according to an aspect.The image sensor package 700 includes multiple semiconductor devices. Insome examples, the image sensor package 700 includes a CMOS image sensorpackage with multiple semiconductor devices arranged in a two-levelconfiguration. The image sensor package 700 may include an image sensordie 704 and a device 740 arranged in a stacked configuration. The imagesensor package 700 may include a first level similar to FIGS. 5 and 6,and a second level similar to FIG. 4. The image sensor package 700 mayinclude any of the features described with reference to the previousfigures.

The image sensor die 704 is coupled to the substrate 702. The imagesensor die 704 may include an image sensor semiconductor die (e.g., aCMOS image sensor die). In some examples, the image sensor die 704includes an interconnection layer 712 and a sensor substrate layer 713.In some examples, the image sensor die 704 does not include aredistribution layer on the backside of the image sensor die 704, anddoes not include a via through the sensor substrate layer 713. The imagesensor die 704 includes a sensor array 708 having an array of pixelelements configured to convert electromagnetic radiation (e.g., light)to electrical signals.

In some examples, the substrate 702 is a redistribution layer (e.g., apackage redistribution layer). The redistribution layer may include oneor more electrical traces and/or one or more passivation layers. Asshown in FIG. 7, the substrate 702 may include conductive contacts 724,and the conductive contacts 724 may include metallic elements such asconductive pads or terminals that are used to transfer electricalsignals.

The interposer 710 defines a first cavity area 701 that holds the imagesensor die 704, and a second cavity area 703 that defines (at least inpart) an empty space between the image sensor die 704 and thetransparent member 706. The image sensor die 704 is disposed within thefirst cavity area 701, and coupled to the interposer 710 using a bondingmaterial 718. The bonding material 718 is configured to hold the imagesensor die 704 within the first cavity area 701. The interposer 710 isalso coupled to the substrate 702. In some examples, the interposer 710includes a base material (e.g., a dielectric/insulating material) thatmay or may not have electrical traces.

Metal trace portions 755 are disposed on the interposer 710 within thefirst cavity area 701 and may extend to the substrate 702. A conductivebump 753 is disposed within the first cavity area 701 between a metaltrace portion 755 and the interconnection layer 712 of the image sensordie 704. For example, the conductive bump 753 is coupled to the metaltrace portion 755 and the interconnection layer 712.

A transparent member 706 is coupled to the interposer 710 using thebonding material 705. In some examples, the bonding material 705includes an adhesive material, a glue bonding material, a fusion bondingmaterial, an anodic bonding material, an epoxy resin, and/or apolymer-based material. The interposer 710 and the bonding material 705may position the transparent member 706 away from the sensor array 708in the direction A1. The distance between the transparent member 706 andthe sensor array 708 defines a gap height 707, and the gap height 707 iscontrolled by the thickness of the interposer 710 and the thickness ofthe bonding material 705 in the direction A1. In some examples, thethickness of the interposer 710 is at least twice the thickness of thebonding material 705.

As shown in FIG. 7 the device 740 is coupled to the substrate 702 usingthe bonding material 744. As shown in FIG. 7, the image sensor package700 includes a substrate 750, and a molding 741 that extends between thesubstrate 750 and the substrate 702. The molding 741 may include anencapsulation material such as an epoxy molding. The molding 741 mayencapsulate the device 740. In some examples, the substrate 750 is aredistribution layer. The redistribution layer may include one or moreelectrical traces and one or more passivation layers. The substrate 750may include conductive contacts 748.

Referring to FIG. 7, the image sensor package 700 includes vias 749,where each via 749 extends from a conductive contact 725 on the device740 to the substrate 750 (through the molding 741). In some examples,the image sensor package 700 includes one or more vias 746 that extendthrough the molding 741. For example, the vias 746 may extend from thesubstrate 702 to the substrate 750. The image sensor package 700includes conductive components 720 coupled to the conductive contacts748 of the substrate 750. In some examples, the conductive components720 are surface-mount packaging elements.

FIG. 8 illustrates a process flow 800 for an image sensor die 804according to an aspect. The image sensor die 804 may be the image sensordie 204, the image sensor die 304, and the image sensor die 404 of FIGS.2 through 4, respectively. In operation 860, the image sensor die 804 isprovided, where the image sensor die 804 includes an interconnectionlayer 812, a sensor substrate layer 813, a sensor array 808 coupled tothe interconnection layer 812, and vias 816 connected to theinterconnection layer 812 and extending into the sensor substrate layer813. In operation 862, the sensor substrate layer 813 is thinned toreveal the vias 816, and a redistribution layer 814 is coupled to thesensor substrate layer 813 such that the vias 816 connect theinterconnection layer 812 to the redistribution layer 814. In operation864, the image sensor die 804 is flipped.

FIG. 9 illustrates a process flow 900 for an image sensor die 904according to an aspect. The image sensor die 904 may be the image sensordie 504, the image sensor die 604, and the image sensor die 704 of FIGS.5 through 7, respectively. In operation 960, the image sensor die 904 isprovided, where the image sensor die 904 includes an interconnectionlayer 912, a sensor substrate layer 913, and a sensor array 908 coupledto the interconnection layer 912. In operation 962, the sensor substratelayer 913 is thinned, and, in operation 964, conductive bumps 953 areattached to the interconnection layer 912.

FIG. 10 illustrates a process flow 1000 for an interposer 1010. Theinterposer 1010 may be any of the previously described interposers. Theprocess flow 1000 may be a micro-machining processing for the interposer1010. In some examples, the interposer 1010 is a silicon interposer. Inoperation 1060, the interposer 1010 is provided. In operation 1062, afirst photo lithography process is performed on the interposer 1010. Inoperation 1064, a first etching and PR stripping process is performed onthe interposer 1010 to create a first cavity area 1001. In operation1066, a second photo lithography process is performed on the interposer1010. In operation 1068, a second etching and PR stripping process isperformed on the interposer 1010 to create a second cavity area 1003. Insome examples, in operation 1070, metal trace portions 1055 are coupledto portions of the interposer 1010 that define the first cavity area1001.

FIG. 11 illustrates a package process flow 1100 for an image sensorpackage according to an aspect. In operation 1160, an interposer 1110 isprovided. In operation 1162, the micro-machining process is performed(e.g., process flow 1000 of FIG. 10). In operation 1164 and operation1166, a transparent member 1106 is coupled to the interposer 1110 usinga bonding material 1105. In operation 1168, an image sensor die 1104 isdisposed within a first cavity area 1101 of the interposer 1110. Inoperation 1170, a bonding material 1118 is used in the gap between theinterposer 1110 and the image sensor die 1104 to hold the image sensordie 1104 within the first cavity area 1101.

FIG. 12 illustrates a package process flow 1200 for the image sensorpackage 200 of FIG. 2 (or other image sensor packages described herein).In some examples, the package process flow 1200 is a continuation of theprocess of FIG. 11. In operation 1260, a part of the image sensorpackage 200 is provided. For example, the image sensor package 200includes the interposer 210 coupled to the transparent member 206 usingthe bonding material 205, and the image sensor die 204 is coupled to theinterposer 210 using the bonding material 218. In operation 1262, apassivation and redistribution layer process is performed to form andcouple the substrate 202 to the interposer 210 and the image sensor die204. In operation 1264, the conductive components 220 are coupled to thesubstrate 202.

FIG. 13 illustrates a package process flow 1300 for the image sensorpackage 300 of FIG. 3 (or other image sensor packages described herein)according to an aspect. In operation 1360, a part of the image sensorpackage 300 is provided, where the part includes the interposer 310coupled to the transparent member 306 via the bonding material 305, andthe image sensor die 304 is disposed within the first cavity area 301 ofthe interposer 310 and coupled to the interposer 310 via the bondingmaterial 318. In operation 1362, the substrate 302 is formed and coupledto the interposer 310 and the image sensor die 304, and the device 340is flip-chip bonded to the substrate 302. In operation 1364, theunder-fill material 344 is disposed between the substrate 302 and thedevice 340. In operation 1366, a molding process is performed to providethe molding 341 onto the substrate 302 such that the molding 341encapsulates the device 340. In operation 1368, the vias 346 are formedthrough the molding 341, the substrate 350 is coupled to the molding341, and the conductive components 320 are coupled to the substrate 350.

FIG. 14 illustrates a package process flow 1400 for the image sensorpackage 400 (or other image sensor packages discussed herein) accordingto an aspect. In operation 1460, a part of the image sensor package 400is provided, where the part includes the interposer 410 that is coupledto the transparent member 406 via the bonding material 405, and theimage sensor die 404 is disposed within the first cavity area 401 andcoupled to the interposer 410 using the bonding material 418. Inoperation 1462, the substrate 402 is coupled to the image sensor die 404and the substrate 402, and the device 440 is die bonded to the substrate402 using a bonding material 444. In operation 1464, a molding processis performed to form the molding 441. In operation 1466, the substrate450 is formed and coupled to the molding 441, and the conductivecomponents 420 are formed on the substrate 450. Also, the vias 446 areformed through the molding 441 to connect the substrate 402 to thesubstrate 450, and the vias 449 are formed through the molding 441 toconnect the device 440 to the substrate 450.

FIGS. 15A and 15B illustrate a flow process 1500 for the image sensorpackage 500, the image sensor package 600, and/or the image sensorpackage 700 (or other image sensor packages discussed herein) accordingto an aspect.

Referring to FIG. 15A, in operation 1560, the interposer 510 isprovided. In operation 1562, the micro-machining process is performed(e.g., process flow 1000 of FIG. 10) on the interposer 510. In operation1564, the transparent member 506 is coupled to the interposer 510 usingthe bonding material 505. In operation 1566, the image sensor die 504 isdisposed within the first cavity area 501 of the interposer 510 andcoupled to the metal trace portion 555 via the conductive bump 553. Inoperation 1568, the bonding material 518 is deposited in the gap betweenthe interposer 510 and the image sensor die 504.

Referring to FIG. 15B, in operation 1570, a part of the image sensor die504 is provided, where the image sensor die 504 is flip-chip bonded tothe interposer 510, and the bonding material 518 is disposed between thegap. In operation 1572, the substrate 502 is formed and coupled to theinterposer 510 and the image sensor die 504, and the conductivecomponents 520 are coupled to the substrate 502.

In some examples, instead of performing operation 1572, the process flow1500 goes from operation 1570 to operation 1574 to develop the imagesensor package 600. In operation 1574, the second level is added to thepackage. For instance, the substrate 602 is formed and coupled to theimage sensor die 604 and the interposer 610 (the interposer 610 beingcoupled to the transparent member 606). The device 640 is flip-chipbonded to the substrate 602, the molding 641 is formed on the substrate602 to encapsulate the device 640, and the vias 646 are formed throughthe molding 641 to connect the substrate 602 to the substrate 650.

In some examples, instead of performing operation 1572 (and operation1574), the process flow goes from operation 1570 to operation 1576 todevelop the image sensor package 700 of FIG. 7. In operation 1574, thesecond level is added to the package. For instance, the substrate 702 isformed and coupled to the image sensor die 704 and the interposer 710(the interposer 710 being coupled to the transparent member 706). Thedevice 740 is die bonded to the substrate 702, the molding 741 is formedon the substrate 702 to encapsulate the device 740, and the vias 746 areformed through the molding 741 to connect the substrate 702 to thesubstrate 750. Also, the vias 749 are formed through the molding 741 toconnect the device 740 to the substrate 750.

It will be understood that, in the foregoing description, when anelement is referred to as being connected to, electrically connected to,coupled to, or electrically coupled to another element, it may bedirectly connected or coupled to the other element, or one or moreintervening elements may be present. In contrast, when an element isreferred to as being directly connected to or directly coupled toanother element, there are no intervening elements. Although the termsdirectly connected to, or directly coupled to may not be used throughoutthe detailed description, elements that are shown as being directlyconnected or directly coupled can be referred to as such. The claims ofthe application, if any, may be amended to recite exemplaryrelationships described in the specification or shown in the figures.Implementations of the various techniques described herein may beimplemented in (e.g., included in) digital electronic circuitry, or incomputer hardware, firmware, software, or in combinations of them.Portions of methods also may be performed by, and an apparatus may beimplemented as, special purpose logic circuitry, e.g., an FPGA (fieldprogrammable gate array) or an ASIC (application specific integratedcircuit).

Some implementations may be implemented using various semiconductorprocessing and/or packaging techniques. Some implementations may beimplemented using various types of semiconductor processing techniquesassociated with semiconductor substrates including, but not limited to,for example, Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride(GaN), Silicon Carbide (SiC) and/or so forth.

While certain features of the described implementations have beenillustrated as described herein, many modifications, substitutions,changes and equivalents will now occur to those skilled in the art. Itis, therefore, to be understood that the appended claims are intended tocover all such modifications and changes as fall within the scope of theembodiments. It should be understood that they have been presented byway of example only, not limitation, and various changes in form anddetails may be made. Any portion of the apparatus and/or methodsdescribed herein may be combined in any combination, except mutuallyexclusive combinations. The embodiments described herein can includevarious combinations and/or sub-combinations of the functions,components and/or features of the different embodiments described.

What is claimed is:
 1. An image sensor package comprising: a lighttransmitting member including a first surface and a second surfacedisposed opposite to the first surface, a distance between the firstsurface and the second surface defining a thickness of the lighttransmitting member in a first direction; a substrate; an interposerdisposed between and coupled to the light transmitting member and thesubstrate, the interposer defining a first cavity area and a secondcavity area, the interposer including a portion having a first inneredge and a second inner edge, the second inner edge being alignednon-parallel to the first inner edge, the portion including an outeredge that is aligned with an outer edge of the light transmitting memberin the first direction; an image sensor die disposed within the firstcavity area of the interposer, the image sensor die having a sensorarray configured to receive light through the light transmitting memberand the second cavity area, the image sensor die including at least oneconductive via; a first bonding material that couples the image sensordie to the interposer within the first cavity area; and a second bondingmaterial that couples the interposer to the second surface of the lighttransmitting member.
 2. The image sensor package of claim 1, wherein thesecond cavity area defines at least a portion of an empty space betweenthe light transmitting member and the sensor array.
 3. The image sensorpackage of claim 1, wherein the substrate is a redistribution layer. 4.The image sensor package of claim 1, wherein the substrate has a lengthbetween a first edge and a second edge, the light transmitting memberhaving a length that corresponds to the length of the substrate, thefirst edge of the substrate being aligned with the outer edge of theportion of the interposer in the first direction.
 5. The image sensorpackage of claim 1, wherein the image sensor die includes acomplementary metal-oxide semiconductor (CMOS) image sensor.
 6. Theimage sensor package of claim 1, wherein the image sensor die iselectrically connected to the substrate.
 7. The image sensor package ofclaim 1, wherein the image sensor die includes an interconnection layer,a sensor substrate layer, and a redistribution layer, the sensorsubstrate layer defining the at least one conductive via.
 8. The imagesensor package of claim 1, further comprising: a plurality of conductivecomponents coupled to the substrate.
 9. The image sensor package ofclaim 1, further comprising: a device coupled to the substrate; asecondary substrate; and a molding that extends between the substrateand the secondary substrate.
 10. The image sensor package of claim 9,wherein the device is coupled to the substrate in a flip-chipconfiguration.
 11. The image sensor package of claim 1, wherein theinterposer has a thickness that is at least twice a thickness of thesecond bonding material.
 12. An image sensor package comprising: a lighttransmitting member including a first surface and a second surfacedisposed opposite to the first surface, a distance between the firstsurface and the second surface defining a thickness of the lighttransmitting member in a first direction, the light transmitting memberincluding length defined between a first outer edge and a second outeredge of the light transmitting member in a second direction; a substratehaving a length defined between a first edge and a second edge of thesubstrate, the first outer edge extending along an axis aligned with thefirst edge; an interposer disposed between and coupled to the lighttransmitting member and the substrate, the interposer defining a cavityarea, the interposer including a first portion having a first inner edgeand a second inner edge, the second inner edge being alignednon-parallel to the first inner edge, the first portion including anouter edge that is aligned with the first outer edge of the lighttransmitting member in the first direction; an image sensor die disposedwithin the cavity area of the interposer, wherein a distance between asensor array of the image sensor die and the light transmittingtransparent member defines a gap height, the gap height being based on asize of the interposer; a first bonding material that couples the imagesensor die to the interposer within the cavity area; and a secondbonding material that couples the interposer to the second surface ofthe light transmitting member.
 13. The image sensor package of claim 12,wherein the image sensor die includes an interconnection layer, a sensorsubstrate layer, and a redistribution layer, the sensor substrate layerdefining one or more conductive vias.
 14. The image sensor package ofclaim 12, further comprising a conductive trace coupled to theinterposer within the cavity area, the conductive trace extending to thesubstrate; and a conductive component coupled to the conductive traceand the image sensor die.
 15. The image sensor package of claim 12,wherein the substrate includes a first surface and a second surface, thefirst surface of the substrate being coupled to the image sensor die,the image sensor package further comprising: a device coupled to thesecond surface of the substrate.
 16. The image sensor package of claim15, wherein the substrate is a first substrate, the image sensor packagefurther comprising: a second substrate; and a molding disposed betweenthe first substrate and the second substrate, the molding encapsulatingthe device.
 17. The image sensor package of claim 16, furthercomprising: one or more conductive vias extending through the molding.18. The image sensor package of claim 12, wherein the interposerincludes a second portion, the second portion being separate from thefirst portion by the cavity.
 19. An image sensor package comprising: alight transmitting member including a first surface and a second surfacedisposed opposite to the first surface, a distance between the firstsurface and the second surface defining a thickness of the lighttransmitting member in a first direction; a substrate having a lengthbetween a first edge and a second edge, the light transmitting memberhaving a length that corresponds to the length of the substrate in asecond direction; an interposer disposed between and coupled to thelight transmitting member and the substrate, the interposer defining afirst cavity area and a second cavity area, the interposer including afirst portion and a second portion, the first portion including a firstinner edge and a second inner edge, the second inner edge being disposedat a non-zero angle with respect to the first inner edge, the firstportion including an outer edge that is aligned with the first outeredge of the light transmitting member in the first direction; an imagesensor die disposed within the first cavity area of the interposer, theimage sensor die having a sensor array configured to receive lightthrough the light transmitting member and the second cavity area; afirst bonding material that couples the image sensor die to theinterposer within the first cavity area; and a second bonding materialthat couples the interposer to the second surface of the lighttransmitting member.
 20. The image sensor package of claim 19, whereinthe image sensor die includes an interconnection layer, a sensorsubstrate layer, and a redistribution layer, the sensor substrate layerdefining at least one conductive via.
 21. The image sensor package ofclaim 19, wherein the first portion of the interposer has an L-shape andthe second portion of the interposer has an L-shape.